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2SC2881-Y
Discrete Semiconductor Products

2SC2881-Y

Active
Shenzhen Slkormicro Semicon Co., Ltd.

120V 500MW 120@100MA,5V 800MA NP

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2SC2881-Y
Discrete Semiconductor Products

2SC2881-Y

Active
Shenzhen Slkormicro Semicon Co., Ltd.

120V 500MW 120@100MA,5V 800MA NP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2SC2881-Y
Current - Collector (Ic) (Max) [Max]800 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120
Frequency - Transition120 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-243AA
Power - Max [Max]500 mW
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]120 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 820$ 0.32

Description

General part information

2SC2881-Y

120V 500MW 120@100MA,5V 800MA NP

Documents

Technical documentation and resources