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25N06
Discrete Semiconductor Products

25N06

Active
UMW

TO-252 N-CHANNEL POWER MOSFET

25N06
Discrete Semiconductor Products

25N06

Active
UMW

TO-252 N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification25N06
Current - Continuous Drain (Id) (Tc)25 A, 25 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)21.2 nC, 21.2 nC
Input Capacitance (Ciss) (Max)939 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252 (DPAK)
Power Dissipation (Max)36.2 W
Rds On (Max)29 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 0.66<4d
10$ 0.47
25$ 0.42
100$ 0.37
250$ 0.34
500$ 0.33
1000$ 0.32
Tape & Reel (TR) 2500$ 0.30<4d
5000$ 0.29
7500$ 0.29
12500$ 0.29
17500$ 0.28
25000$ 0.28

CAD

3D models and CAD resources for this part

Description

General part information

25N06

N-Channel 60 V 25A (Tc) 36.2W (Tc) Surface Mount TO-252 (DPAK)

Documents

Technical documentation and resources