Technical Specifications
Parameters and characteristics for this part
| Specification | 2SA1319S-AA |
|---|---|
| Current - Collector (Ic) (Max) | 700 mA |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 140 |
| Frequency - Transition | 120 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Package Name | 3-NP |
| Power - Max | 700 mW |
| Transistor Type | PNP |
| Vce Saturation (Max) | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Bulk | 1817 | $ 0.17 | <4d |
CAD
3D models and CAD resources for this part
Description
General part information
2SA1319S-AA
Bipolar (BJT) Transistor PNP 160 V 700 mA 120MHz 700 mW Through Hole 3-NP
Documents
Technical documentation and resources
No documents available