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10A10-T/B
Discrete Semiconductor Products

10A10-T/B

Active
MDD

DIODE GEN PURP 1KV 10A R-6

10A10-T/B
Discrete Semiconductor Products

10A10-T/B

Active
MDD

DIODE GEN PURP 1KV 10A R-6

Technical Specifications

Parameters and characteristics for this part

Specification10A10-T/B
Capacitance150 pF
Current - Average Rectified (Io)10 A
Current - Reverse Leakage10 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)150 °C
Operating Temperature - Junction (Min)-50 °C
Package / CaseR-6, Axial
Package NameR-6
SpeedStandard Recovery
Speed - Fast Recovery (Minimum)200 mA, 500 ns
Speed - Recovery Current200 mA, 200 mA
Speed - Recovery Time500 ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)1 kV
Voltage - Forward (Vf) (Max)1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBulk 2000$ 0.79<4d

CAD

3D models and CAD resources for this part

Description

General part information

10A10-T/B

Diode 1000 V 10A Through Hole R-6

Documents

Technical documentation and resources