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1N5806
Discrete Semiconductor Products

1N5806

Active
Solid State Inc.

DIODE GEN PURP 150V 2.5A DO204AP

1N5806
Discrete Semiconductor Products

1N5806

Active
Solid State Inc.

DIODE GEN PURP 150V 2.5A DO204AP

Technical Specifications

Parameters and characteristics for this part

Specification1N5806
Current - Average Rectified (Io)2.5 A
Current - Reverse Leakage1 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseDO-204AP, Axial
Package NameDO-204AP
Reverse Recovery Time (trr)25 ns
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)150 V
Voltage - Forward (Vf) (Max)875 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated

CAD

3D models and CAD resources for this part

Description

General part information

1N5806

Diode 150 V 2.5A Through Hole DO-204AP

Documents

Technical documentation and resources

No documents available