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SDS065J016H3-ISATH
Discrete Semiconductor Products

SDS065J016H3-ISATH

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Sanan Power Semiconductor

DIODE SIL CARB 650V 44A TO2472L

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SDS065J016H3-ISATH
Discrete Semiconductor Products

SDS065J016H3-ISATH

Active
Sanan Power Semiconductor

DIODE SIL CARB 650V 44A TO2472L

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSDS065J016H3-ISATH
Capacitance @ Vr, F837 pF
Current - Average Rectified (Io)44 A
Current - Reverse Leakage @ Vr48 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-247-2
Reverse Recovery Time (trr)0 ns
Speed500 mA
Supplier Device PackageTO-247-2L
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If [Max]1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 200$ 4.99
Tube 1$ 4.94
30$ 3.28
120$ 2.71
510$ 2.29
1020$ 2.14
2010$ 2.02
5010$ 1.88

Description

General part information

SDS065J016H3-ISATH

DIODE SIL CARB 650V 44A TO2472L

Documents

Technical documentation and resources