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MBRT400200R
Discrete Semiconductor Products

MBRT400200R

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GeneSiC Semiconductor

DIODE MOD SCHOT 200V 200A 3TOWER

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MBRT400200R
Discrete Semiconductor Products

MBRT400200R

Active
GeneSiC Semiconductor

DIODE MOD SCHOT 200V 200A 3TOWER

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMBRT400200R
Current - Average Rectified (Io) (per Diode)200 A
Current - Reverse Leakage @ Vr1 mA
Diode Configuration1 Pair Common Anode
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseThree Tower
Speed500 ns, 200 mA
Supplier Device PackageThree Tower
TechnologySchottky
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If920 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 102.46
20$ 74.40

Description

General part information

MBRT400200R

DIODE MOD SCHOT 200V 200A 3TOWER

Documents

Technical documentation and resources