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THGJFMT2E46BATV
Integrated Circuits (ICs)

THGJFMT2E46BATV

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Kioxia America, Inc.

512GB UFS V4.0 GEN 13

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THGJFMT2E46BATV
Integrated Circuits (ICs)

THGJFMT2E46BATV

Active
Kioxia America, Inc.

512GB UFS V4.0 GEN 13

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTHGJFMT2E46BATV
Clock Frequency2.32 GHz
Memory FormatFLASH
Memory InterfaceUFS 4.0
Memory Organization512 G
Memory Size4 Tbit
Memory TypeNon-Volatile
Operating Temperature [Max]85 °C
Operating Temperature [Min]-25 °C
TechnologyFLASH - NAND (TLC)
Voltage - Supply [Max]2.7 V
Voltage - Supply [Min]2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 113.19

Description

General part information

THGJFMT2E46BATV

512GB UFS V4.0 GEN 13

Documents

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