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1N5819W
Discrete Semiconductor Products

1N5819W

Active
Shenzhen Slkormicro Semicon Co., Ltd.

40V INDEPENDENT TYPE 1A 900MV@3A

1N5819W
Discrete Semiconductor Products

1N5819W

Active
Shenzhen Slkormicro Semicon Co., Ltd.

40V INDEPENDENT TYPE 1A 900MV@3A

Technical Specifications

Parameters and characteristics for this part

Specification1N5819W
Capacitance120 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage1 mA
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)125 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseSOD-123
Package NameSOD-123
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologySchottky
Voltage - DC Reverse (Vr) (Max)40 V
Voltage - Forward (Vf) (Max)600 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 0.10<4d
10$ 0.05
100$ 0.03
500$ 0.02
1000$ 0.02
Tape & Reel (TR) 3000$ 0.01<4d
6000$ 0.01
9000$ 0.01
15000$ 0.01
21000$ 0.01
30000$ 0.01

CAD

3D models and CAD resources for this part

Description

General part information

1N5819W

40V INDEPENDENT TYPE 1A 900MV@3A

Documents

Technical documentation and resources