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WI71100TR
Discrete Semiconductor Products

WI71100TR

Active
Wise-Integration

POWER GAN IC DISCRETE 8X8 PDFN

WI71100TR
Discrete Semiconductor Products

WI71100TR

Active
Wise-Integration

POWER GAN IC DISCRETE 8X8 PDFN

Technical Specifications

Parameters and characteristics for this part

SpecificationWI71100TR
Current - Continuous Drain (Id) (Tj)17 A
Drain to Source Voltage (Vdss)700 V
Drive Voltage (Max Rds On, Min Rds On)6 V
FET TypeN-Channel
Gate Charge (Max)4.8 nC
Input Capacitance (Ciss) (Max)120 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / Case8-LDFN Exposed Pad
Package Length8 mm
Package Name8-PDFN
Package Width8 mm
Rds On (Max)120 mOhm
TechnologyGaNFET (Gallium Nitride)
Vgs (Max) Positive6 V
Vgs(th) (Max)1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 6.16<4d
10$ 4.73
25$ 4.37
100$ 3.97
250$ 3.83
Tape & Reel (TR) 2500$ 3.48<4d

CAD

3D models and CAD resources for this part

Description

General part information

WI71100TR

POWER GAN IC DISCRETE 8X8 PDFN

Documents

Technical documentation and resources