Deep-Dive with AI
Search across all available documentation for this part.
DocumentsWI71100TR | Datasheet
Deep-Dive with AI
DocumentsWI71100TR | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | WI71100TR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17 A |
| Drain to Source Voltage (Vdss) | 700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-LDFN Exposed Pad |
| Rds On (Max) @ Id, Vgs | 120 mOhm |
| Supplier Device Package | 8-PDFN (8x8) |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) [Max] | 6 V |
| Vgs (Max) [Min] | -4 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2494 | $ 5.99 | |
Description
General part information
WI71100TR
POWER GAN IC DISCRETE 8X8 PDFN
Documents
Technical documentation and resources