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MDD60N04D
Discrete Semiconductor Products

MDD60N04D

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MDD

MOSFET N 40V 60A TO-252

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MDD60N04D
Discrete Semiconductor Products

MDD60N04D

Active
MDD

MOSFET N 40V 60A TO-252

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMDD60N04D
Current - Continuous Drain (Id) @ 25°C60 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]29 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1030 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)65 W
Rds On (Max) @ Id, Vgs9.5 mOhm
Supplier Device PackageTO-252
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2500$ 0.49

Description

General part information

MDD60N04D

MOSFET N 40V 60A TO-252

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