Discrete Semiconductor Products

AO6403

NRND

MOSFET P-CH 30V 6A 6TSOP

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Discrete Semiconductor Products

NRND

MOSFET P-CH 30V 6A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	AO6403

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18.5 nC
Input Capacitance (Ciss) (Max) @ Vds	920 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-457, SC-74
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.80

General part information

MOSFET P-CH 30V 6A 6TSOP

Technical documentation and resources