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R6035ENZ4C13Active
Rohm Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 35A I(D), 600V, 0.102OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247,
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Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Moisture Sensitivity Level - Transistors