NXPSC Series
Manufacturer: WeEn Semiconductors Co., Ltd
DIODE SIL CARBIDE 650V 8A D2PAK
| Part | Package / Case | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If | Speed | Technology | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Max] | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Current - Average Rectified (Io) | Current - Average Rectified (Io) (per Diode) | Diode Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() WeEn Semiconductors Co., Ltd | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 260 pF | 0 ns | 1.7 V | No Recovery Time | SiC (Silicon Carbide) Schottky | 230 µA | 175 °C | D2PAK | 650 V | Surface Mount | 8 A | ||
![]() WeEn Semiconductors Co., Ltd | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 130 pF | 0 ns | 1.7 V | No Recovery Time | SiC (Silicon Carbide) Schottky | 170 µA | 175 °C | DPAK | 650 V | Surface Mount | 4 A | ||
![]() WeEn Semiconductors Co., Ltd | TO-220-2 | 534 pF | 0 ns | 1.7 V | No Recovery Time | SiC (Silicon Carbide) Schottky | 100 µA | 175 °C | TO-220AC | 650 V | Through Hole | 16 A | ||
![]() WeEn Semiconductors Co., Ltd | TO-220-2 | 260 pF | 0 ns | 1.7 V | No Recovery Time | SiC (Silicon Carbide) Schottky | 230 µA | 175 °C | TO-220AC | 650 V | Through Hole | 8 A | ||
![]() WeEn Semiconductors Co., Ltd | TO-220-2 Full Pack Isolated Tab | 130 pF | 0 ns | 1.7 V | No Recovery Time | SiC (Silicon Carbide) Schottky | 170 µA | 175 °C | TO-220F | 650 V | Through Hole | 4 A | ||
![]() WeEn Semiconductors Co., Ltd | TO-247-3 | 0 ns | 1.7 V | No Recovery Time | SiC (Silicon Carbide) Schottky | 250 µA | 175 °C | TO-247-3 | 650 V | Through Hole | 20 A | 1 Pair Common Cathode | ||
![]() WeEn Semiconductors Co., Ltd | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 260 pF | 0 ns | 1.7 V | No Recovery Time | SiC (Silicon Carbide) Schottky | 230 µA | 175 °C | DPAK | 650 V | Surface Mount | 8 A | ||
![]() WeEn Semiconductors Co., Ltd | TO-220-2 | 130 pF | 0 ns | 1.7 V | No Recovery Time | SiC (Silicon Carbide) Schottky | 170 µA | 175 °C | TO-220AC | 650 V | Through Hole | 4 A | ||
![]() WeEn Semiconductors Co., Ltd | TO-220-2 Full Pack Isolated Tab | 190 pF | 0 ns | 1.7 V | No Recovery Time | SiC (Silicon Carbide) Schottky | 200 µA | 175 °C | TO-220F | 650 V | Through Hole | 6 A | ||
![]() WeEn Semiconductors Co., Ltd | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 300 pF | 0 ns | 1.7 V | No Recovery Time | SiC (Silicon Carbide) Schottky | 250 µA | 175 °C | D2PAK | 650 V | Surface Mount | 10 A |