/ 0
100%
GANE7R0-100CBAZActive
Nexperia USA Inc.
100 V, 7.0 MOHM GALLIUM NITRIDE (GAN) FET IN A 2.5 MM X 1.5 MM WAFER LEVEL CHIP-SCALE PACKAGE (WLCSP)
Ask questions about this document, request analysis, or get help understanding technical specifications.
Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs
100 V, 7.0 mOhm Gallium Nitride (GaN) FET in a 2.5 mm x 1.5 mm Wafer Level Chip-Scale Package (WLCSP)