16:[["$","meta","0",{"name":"viewport","content":"width=device-width, initial-scale=1"}],["$","meta","1",{"charSet":"utf-8"}],["$","title","2",{"children":"θ_JA and Ψ_JT | R6511END3TL1 - Rohm Semiconductor | Zenode.ai"}],["$","meta","3",{"name":"description","content":"Browse datasheets and documents for R6511END3TL1 - Rohm Semiconductor. Key specs: Current - Continuous Drain (Id) @ 25°C 11 A A, Rds On (Max) @ Id, Vgs 400 mOhm mOhm, Mounting Type Surface Mount, Technology MOSFET (Metal Oxide), Gate Charge (Qg) (Max) @ Vgs 32 nC nC, Package / Case SC-63. Series: R6"}],["$","meta","4",{"name":"keywords","content":"R6511END3TL1, Rohm Semiconductor, Series R6511KND3, Single FETs, MOSFETs, FETs, MOSFETs, Transistors, Discrete Semiconductor Products, Current - Continuous Drain (Id) @ 25°C, Rds On (Max) @ Id, Vgs, Mounting Type, Technology, Gate Charge (Qg) (Max) @ Vgs, Package / Case, Package / Case, Package / Case, Power Dissipation (Max), Operating Temperature, FET Type, Vgs(th) (Max) @ Id, datasheet, specifications, pricing, electronic components"}],["$","meta","5",{"name":"robots","content":"index, follow"}],["$","meta","6",{"name":"googlebot","content":"index, follow, max-image-preview:large, max-snippet:-1"}],["$","meta","7",{"name":"product:mpn","content":"R6511END3TL1"}],["$","meta","8",{"name":"product:brand","content":"Rohm Semiconductor"}],["$","meta","9",{"name":"product:category","content":"Single FETs, MOSFETs, FETs, MOSFETs, Transistors, Discrete Semiconductor Products"}],["$","meta","10",{"name":"application/ld+json","content":"$1b"}],["$","meta","11",{"name":"product:series","content":"R6511KND3"}],["$","meta","12",{"property":"og:title","content":"θ_JA and Ψ_JT | R6511END3TL1 - Rohm Semiconductor | Zenode.ai"}],["$","meta","13",{"property":"og:description","content":"Browse datasheets and documents for R6511END3TL1 - Rohm Semiconductor. Key specs: Current - Continuous Drain (Id) @ 25°C 11 A A, Rds On (Max) @ Id, Vgs 400 mOhm mOhm, Mounting Type Surface Mount, Technology MOSFET (Metal Oxide), Gate Charge (Qg) (Max) @ Vgs 32 nC nC, Package / Case SC-63. Series: R6"}],["$","meta","14",{"property":"og:site_name","content":"Zenode.ai"}],["$","meta","15",{"property":"og:locale","content":"en_US"}],["$","meta","16",{"property":"og:image","content":"https://cdn.zenode.ai/blobs/documents/0355330711bfdc15e6ccd6dc229f870dc50ea6a1263659b855fe8f38f15c1bc6.jpeg"}],["$","meta","17",{"property":"og:image:width","content":"1200"}],["$","meta","18",{"property":"og:image:height","content":"630"}],["$","meta","19",{"property":"og:image:alt","content":"R6511END3TL1 - Rohm Semiconductor"}],["$","meta","20",{"property":"og:image:type","content":"image/jpeg"}],["$","meta","21",{"property":"og:type","content":"website"}],["$","meta","22",{"name":"twitter:card","content":"summary_large_image"}],["$","meta","23",{"name":"twitter:site","content":"@zenode"}],["$","meta","24",{"name":"twitter:creator","content":"@zenode"}],["$","meta","25",{"name":"twitter:title","content":"θ_JA and Ψ_JT | R6511END3TL1 - Rohm Semiconductor"}],["$","meta","26",{"name":"twitter:description","content":"Browse datasheets and documents for R6511END3TL1 - Rohm Semiconductor. Key specs: Current - Continuous Drain (Id) @ 25°C 11 A A, Rds On (Max) @ Id, Vgs 400 mOhm mOhm, Mounting Type Surface Mount, Technology MOSFET (Metal Oxide), Gate Charge (Qg) (Max) @ Vgs 32 nC nC, Package / Case SC-63. Series: R6"}],["$","meta","27",{"name":"twitter:image","content":"https://cdn.zenode.ai/blobs/documents/0355330711bfdc15e6ccd6dc229f870dc50ea6a1263659b855fe8f38f15c1bc6.jpeg"}],["$","meta","28",{"name":"twitter:image:alt","content":"R6511END3TL1 - Rohm Semiconductor"}],["$","link","29",{"rel":"icon","href":"/favicon/favicon.ico"}],["$","meta","30",{"name":"next-size-adjust"}]]